GaN HEMT semiconductor etching

UK Atomic Energy AuthoritycontractFind a TenderRef ocds-h6vhtk-065830Procurement Act 2023active
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Awarded value

Suppliers

1

Lots

1

1 awarded

Published

19 Feb 2026

Description

The project aims to create full microelectronics manufacturing on Gallium Nitride (GaN) integrated circuits

Scope

Reference
ocds-h6vhtk-065830
Commercial tool
Standalone contract

Submission & procedure

Procedure
Below threshold - without competition

Award details

Awarded supplier(s), contract period and value as published in the award notice.

Awarded value

Award date

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Contract end

Awarded to