Dual-growth chamber Molecular Beam Epitaxy System (2 Lots)
Estimated value
£4.8m
Awarded value
£4.9m
Suppliers
1
Lots
1
Published
20 Oct 2025
Description
The EPSRC National Epitaxy Facility (NEF) based at the University of Sheffield has been providing bespoke semiconductor wafers to academia and industry for 45 years. It is a unique world-class centre combining technical excellence and expertise with state-of-the-art epitaxy and material characterization equipment. We are looking to further enhance our capability provision to the UK semiconductor community, by investing in a new linked dual-chamber Molecular Beam Epitaxy (MBE) System for arsenides/phosphides and arsenides/antimonides growth that is fully automated, capable of 24/7 operation, reliable, and resource-efficient allowing further expansion in the future. The system is replacing two existing VG reactors capable of 4" wafer growth of high-quality arsenides/phosphides and arsenides/antimonides, and should offer higher throughput thanks to automation of growth recipes for 24/7 operation, and integrated solutions allowing maintenance of critical components (such as ion gauges, cells) without breaking chamber vacuum. This tender is divided into 2 Lots: (Suppliers may bid for one or both Lots) Lot 1 - MBE System Lot 2 - In-situ monitoring equipment
Scope
- Reference
- 4420/DM/25
- Total value
- £4,750,000 excluding VAT
- Commercial tool
- Standalone contract
- Contract dates
- 30 Apr 2025 to 31 Aug 2026
- CPV classifications
- 31712000 38000000
- Particular suitability
- Small and medium-sized enterprises (SME)Voluntary, community and social enterprises (VCSE)
Submission & procedure
- Submission deadline
- 14 Mar 2025, 1:00 pm
Award details
Awarded supplier(s), contract period and value as published in the award notice.
Awarded value
£4.9m
Award date
03 Sept 2025
Contract start
30 Apr 2025
Contract end
31 Aug 2026